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Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots

机译:Ge-Si核壳纳米线量子点中与电场有关的g因子各向异性

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摘要

We present angle-dependent measurements of the effective g factor g ☆ in a Ge-Si core-shell nanowire quantum dot. g ☆ is found to be maximum when the magnetic field is pointing perpendicularly to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g ☆ significantly. g ☆ is almost completely quenched when the magnetic field is aligned with the nanowire axis. These findings confirm recent calculations, where the obtained anisotropy is attributed to a Rashba-type spin-orbit interaction induced by heavy-hole light-hole mixing. In principle, this facilitates manipulation of spin-orbit qubits by means of a continuous high-frequency electric field.
机译:我们介绍了Ge-Si核壳纳米线量子点中有效g因子g☆的角度依赖性测量。当磁场垂直指向纳米线和局部栅极感应的电场时,发现g☆最大。磁场与电场的对准使g☆大大降低。当磁场与纳米线轴对齐时,g☆几乎被完全淬灭。这些发现证实了最近的计算,其中获得的各向异性归因于重孔轻孔混合引起的Rashba型自旋轨道相互作用。原则上,这有利于通过连续的高频电场操纵自旋轨道量子位。

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